CJU40P04 mosfet equivalent, p-channel power mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS
APPLICATIONS
z Excelle.
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current z Good s.
The CJU40P04 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is well
1. GATE 2. DRAIN
3. SOURCE
suited for high current load applications.
FEATURES z High density cell design for ultra low .
Image gallery
TAGS
Download (Size : 823.85KB)