CJU40N10 mosfet equivalent, n-channel power mosfet.
* High density cell design for ultra low RDS(on)
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
APPLICATIO.
such as
power supplies, converters, power motor controls and bridge circuits. FEATURES
* High density cell design .
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time.
1. GATE 2. DRAIN 3. SOURCE
Desighed for high voltag.
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