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CJU40N10 - N-Channel Power MOSFET

Description

energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

1.

Features

  • High density cell design for ultra low RDS(on).
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJU40N10
Manufacturer JCET
File Size 810.21 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU40N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU40N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   17mΩ@10V ID 40A  TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 1. GATE 2. DRAIN 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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