CJT04N15 Datasheet, JCET

SOT-223   1. GATE 2. DRAIN 3. SOURCE 12 3 FEATURE z High density cell design for ultra low RDS(ON) z Fully characte.

This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications. SOT-223   1. GATE 2. DRAIN 3. SOURCE 12 3 FEATURE z High density cell design for ultra low.

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CJT1117-2.5

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CJT1117-5.0

CJT1117-ADJ

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