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JCET

CESD7V0D7 Datasheet Preview

CESD7V0D7 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
CESD7V0D7 ESD Protection Diode
SOD-723
DESCRIPTION
The CESD7V0D7 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Standoff Voltage:7.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z These are PbFree Devices
Maximum Ratings @Ta=25
Parameter
IEC6100042(ESD)
Air
Contact
ESD voltage
Per Human Body Model
Per Machine Model
Total Power Dissipation on FR-5 Board (Note 1)
Symbol
PD
Limit
±30
±30
16
400
100
Thermal Resistance JunctiontoAmbient
RΘJA
1250
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
V
mW
/W
B,Dec,2011




JCET

CESD7V0D7 Datasheet Preview

CESD7V0D7 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
IF
VF
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Device
Device
Marking
VRWM (V)
Max
IR (μA)
@ VRWM
Max
VBR (V)
@ IT(Note 2)
Min Max
IT
mA
IPP(A) +
Max
VC (V) @Max
I+
PP
Max
C (pF)
Typ
CESD7V0D7
EE
7.0
1.0
7.5 8.7 1.0 8.1
15.1 55
+Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
B,Dec,2011


Part Number CESD7V0D7
Description ESD Protection Diode
Maker JCET
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CESD7V0D7 Datasheet PDF






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