INC6006AC1 Datasheet | Isahaya Electronics Corporation

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION INC6006AC1 is a silicon NPN transistor. It is designed with high voltage. FEATURE - Small package for easy mounting. - High voltage VCEO = 160V - Low voltage VCE(sat) = 0.2V(MAX) - plementary ： INA6006AC1 APPLICATION High voltage switching. 2.8 1.90 0.95 0.95 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 0.65 1.5 0.65 UNIT：mm ① ②③ 1.1 0.8 0～0.1 0.13 Terminal Connector ①：Base ②：Emitter ③：Collector JEITA:SC-59 JEDEC: Similar to TO-236 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature - Mounted on glass epoxy board(46mm×19mm×1mm) ELECTRICAL CHARACTERISTICS（Ta=25℃） RATING 180 6 160 200 100 200 500（- ） ＋150...