INC6006AS1 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Isahaya Electronics Corporation

General Description

INC6006AS1 is a silicon NPN transistor.

It is designed with high voltage.

Hi-Fi Audio, High voltage switching.

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INC6006AS1 silicon npn epitaxial type transistor by Isahaya Electronics Corporation - Datasheet Preview

Datasheet Details

Part number	INC6006AS1
Manufacturer	Isahaya Electronics Corporation
File Size	268.97 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	INC6006AS1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DESCRIPTION INC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE High voltage VCEO = 160V Low voltage VCE(sat) = 0.2V(MAX) Small capacitance Cob=1.7pF(TYP) Complementary ： INA6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. MAXIMUM RATING（Ta=25℃） SYMBOL VCBO VEBO VCEO ICM IC PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Peak collector current Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature INC6006AS1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 4.0 UNIT：ｍｍ 0.4 7.5MAX 3.0 1.0 1.0 13.0MIN 14.0 0.1 0.45 2.5 2.5 2.