RF1S30N06LESM Datasheet | Intersil

RFP30N06LE, RF1S30N06LESM Data Sheet April 1999 File Number 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2k V (Human Body Model) of ESD. Formerly developmental type TA49027. Features - 30A, 60V - r DS(ON) = 0.047Ω - 2k V ESD Protected - Temperature pensating PSPICE™ Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” [ /Title (RFP3 0N06L E, RF1S3 0N06L ESM) /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, ESD Rated, 0.047 Ohm, Logic Level NChan- Symbol Ordering Information PART NUMBER RFP30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-263AB BRAND F30N06LE 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 6-260 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of Micro Sim Corporation. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP30N06LE,...