Datasheet4U Logo Datasheet4U.com

HCS20MS - Radiation Hardened Dual 4-Input NAND Gate

Description

The Intersil HCS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

A low on any input forces the output to a High state.

The HCS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Operat.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HCS200 KEELOQ CODE HOPPING ENCODER Microchip Technology
HCS201 KEELOQ Code Hopping Encoder Microchip Technology
HCS20NT60V N-Channel MOSFET SemiHow
HCS2512 METAL STRIP CURRENT SENSING RESISTORS HITANO
HCS08 Microcontrollers Freescale Semiconductor

Other Datasheets by Intersil (Renesas)

Part Number Description
HCS21MS Radiation Hardened Dual 4-Input AND Gate
HCS240MS Radiation Hardened Octal Buffer/Line Driver
HCS241MS Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
HCS244MS Radiation Hardened Octal Buffer/Line Driver/ Three-State
HCS244T Radiation Hardened Octal Buffer/Line Driver/ Three-State

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HCS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 GND 7 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.
Published: |