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BUZ76 - N-Channel Power MOSFET

Features

  • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power.
  • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800 • High Input Impedance Ohm, N- Formerly developmental type TA17404.