Datasheet4U Logo Datasheet4U.com

FSJ9160R - P-Channel Power MOSFETs

Download the FSJ9160R datasheet PDF. This datasheet also covers the FSJ9160D variant, as both devices belong to the same p-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for c

Key Features

  • 44A, -100V, rDS(ON) = 0.055Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 10.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSJ9160D-Intersil.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FSJ9055D 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
FSJ9055R 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
FSJ9260D 27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
FSJ9260R 27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs Intersil Corporation
FSJ055D N-Channel Power MOSFETs Intersil Corporation

Other Datasheets by Intersil (Renesas)

Part Number Description
FSJ9160D P-Channel Power MOSFETs
FSJ160D N-Channel Power MOSFETs
FSJ160R N-Channel Power MOSFETs
FSJ163R N-Channel Power MOSFETs
FSJ260D N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 44A, -100V, rDS(ON) = 0.055Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 10.