FSJ9260D - 27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Product Overview

Intersil Corporation

Datasheet Details

Part number	FSJ9260D
Manufacturer	Intersil Corporation
File Size	46.83 KB
Description	27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Datasheet	FSJ9260D Datasheet
Additional preview pages of the FSJ9260D datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

27A, -200V, rDS(ON) = 0.130Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 18.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD S.

📁 Similar Datasheet

FSJ9160D - P-Channel Power MOSFETs (Intersil)
FSJ9160R - P-Channel Power MOSFETs (Intersil)
FSJ160D - N-Channel Power MOSFETs (Intersil)
FSJ160R - N-Channel Power MOSFETs (Intersil)
FSJ163R - N-Channel Power MOSFETs (Intersil)
FSJ260D - N-Channel Power MOSFETs (Intersil)
FSJ260R - N-Channel Power MOSFETs (Intersil)
FSJ264D - N-Channel Power MOSFETs (Intersil)

Other Datasheets by Intersil Corporation

FSJ9260R - 27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055D - 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ9055R - 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSJ055D - N-Channel Power MOSFETs
FSJ055R - N-Channel Power MOSFETs
FSJ163D - N-Channel Power MOSFETs

Published: Mar 23, 2005 |