SI4435DYPBF mosfet equivalent, hexfet power mosfet.
2.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This pro.
. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabi.
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in ba.
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