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International Rectifier Electronic Components Datasheet

SI4435DY Datasheet

Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm

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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
S
S
S
G
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
PD- 93768A
Si4435DY
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -30V
3 6D
4 5 D RDS(on) = 0.020
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
10/14/99


International Rectifier Electronic Components Datasheet

SI4435DY Datasheet

Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm

No Preview Available !

Si4435DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-30 ––– –––
––– -0.019 –––
––– 0.015 0.020
––– 0.026 0.035
-1.0 ––– –––
––– 11 –––
––– ––– -10
––– ––– -10
––– ––– -100
––– ––– 100
––– 40 60
––– 7.1 –––
––– 8.0 –––
––– 16 24
––– 76 110
––– 130 200
––– 90 140
––– 2320 –––
––– 390 –––
––– 270 –––
V
V/°C
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -8.0A ‚
VGS = -4.5V, ID = -5.0A ‚
VDS = VGS, ID = -250µA
VDS = -15V, ID = -8.0A
VDS = -24V, VGS = 0V
VDS = -15V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -4.6A
VDS = -15V
VGS = -10V ‚
VDD = -15V, VGS = -10V ‚
ID = -1.0A
RG = 6.0
RD = 15
VGS = 0V
VDS = -15V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -2.5 A showing the
integral reverse
––– ––– -50
p-n junction diode.
G
––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = -2.5A
––– 33 50 nC di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com


Part Number SI4435DY
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
Maker International Rectifier
Total Page 8 Pages
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