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JANSR2N7666T1 Datasheet, International Rectifier

JANSR2N7666T1 mosfet equivalent, radiation hardened power mosfet.

JANSR2N7666T1 Avg. rating / M : 1.0 rating-12

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JANSR2N7666T1 Datasheet

Features and benefits


* Single event effect (SEE) hardened (up to LET of 90.5 MeV
*cm2/mg)
* Low RDS(on)
* Improved SOA for linear mode operation
* Fast switching
* Low .

Application


* DC-DC converter
* Motor drives
* Power distribution
* Latching current limiter Product Validation Pro.

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Eve.

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TAGS

JANSR2N7666T1
Radiation
Hardened
Power
MOSFET
International Rectifier

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