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IRLR3715ZPBF - HEXFET Power MOSFET

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  • × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎛ Qgs 2 ⎞ f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the thr.

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www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l l HEXFET® Power MOSFET IRLR3715ZPbF IRLU3715ZPbF 11m: PD - 95088A VDSS RDS(on) max 20V Qg 7.2nC Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRLR3715Z I-Pak IRLU3715Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 49 35 Units V A ™ f f 200 40 20 0.27 -55 to + 175 300 (1.
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