Datasheet4U Logo Datasheet4U.com

IRLR3715ZCPBF - HEXFET Power MOSFET

Features

  • ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time t.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3715Z N-Channel MOSFET INCHANGE
IRLR3717 N-Channel MOSFET INCHANGE
IRLR3705Z N-Channel MOSFET INCHANGE
IRLR3103 N-Channel MOSFET INCHANGE
IRLR3105 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR3715Z HEXFET Power MOSFET
IRLR3715ZPBF HEXFET Power MOSFET
IRLR3715 SMPS MOSFET
IRLR3715PBF SMPS MOSFET
IRLR3714 SMPS MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications l l HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free VDSS RDS(on) max 20V 11m: Qg 7.2nC Benefits l l Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak IRLR3715ZCPbF I-Pak IRLU3715ZCPbF www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 49 35 Units V A ™ f f 200 40 20 0.
Published: |