IRLR3410PBF mosfet equivalent, power mosfet.
valanche Energy (mJ)
350
TOP
300
15V
BOTTOM
ID 3.7A 6.4A 9.0A
250
VDS
L
DRIVER
200
RG
10V
D.U.T
IAS tp
+ V - DD
150
A
0.01Ω
100
Fig 12a. Unclamped Induct.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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