IRLR3103PbF mosfet equivalent, power mosfet.
Inductive Test Circuit
100
0
VDD = 15V
25 50 75 100 125 150
175
A
V(BR)DSS tp
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
l
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 0.019Ω
G S
ID = 55A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined.
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