IRLR024ZPbF mosfet equivalent, power mosfet.
n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Fre.
PD - 95773B
IRLR024ZPbF IRLU024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 58mΩ
S ID = 16A
D-Pak
I-Pak
IRLR024.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive av.
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