IRLR024NPBF mosfet equivalent, hexfet power mosfet.
on Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50KΩ
QG
1.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design.
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