IRLML5203PBF mosfet equivalent, power mosfet.
078
D 2.80 3.04
.111 .119
E 2.10 2.64
.083 .103
E1 1.20
1.40
.048 .055
e 0.95 BSC
.0375 BSC
e1 1.90 BSC
.075 BSC
L 0.40 0.60 .0158 .0236
L1 0.25 BS C
.0118 .
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Pow.
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load.
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