IRLML5203GPbF mosfet equivalent, power mosfet.
ASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFOR.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Pow.
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 190.89KB)