IRHYB597Z30CM Datasheet - International Rectifier

IRHYB597Z30CM RADIATION HARDENED POWER MOSFET

PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHYB597Z30CM 100K Rads (Si) IRHYB593Z30CM 300K Rads (Si) RDS(on) 0.048Ω 0.048Ω ID -20A -20A International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/c.

IRHYB597Z30CM Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Dr

IRHYB597Z30CM Datasheet (178.02 KB)