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IRHN7130 - Radiation Hardened Power MOSFET

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Proton tolerant.
  • Simple drive requirements.
  • Hermetically sealed.
  • Ceramic package.
  • Light weight.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 14A.
  • RDS(on),max : 180m.
  • QG,max : 45nC Potential.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN7150 Radiation Hardened Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRHN7130 Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology PD-90821D Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Proton tolerant  Simple drive requirements  Hermetically sealed  Ceramic package  Light weight  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 14A  RDS(on),max : 180m  QG,max : 45nC Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.