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IRGS4B60KD1 - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS4B60KD1 datasheet PDF. This datasheet also covers the IRGB4B60KD1PBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transien.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4B60KD1PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS4B60KD1PBF Insulated Gate Bipolar Transistor
IRGS4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
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