IRGP4630-EDPbF transistor equivalent, insulated gate bipolar transistor.
G Gate
C Collector
Benefits
E Emitter
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching
Square RBSOA and maximum juncti.
* Appliance Drives
* Inverters
* UPS
Features
G Gate
C Collector
Benefits
E Emitter
Low VCE(ON) and swi.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 1.20MB)