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IRGP4630-EDPbF - Insulated Gate Bipolar Transistor

Download the IRGP4630-EDPbF datasheet PDF. This datasheet also covers the IRGS4630DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGS4630DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4630DPbF Insulated Gate Bipolar Transistor
IRGP4640-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640DPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4640PBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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