IRGP4078DPBF Features
* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C
* 5 µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ultra-low VF Hy
IRGP4078D-EPBF-InternationalRectifier.pdf
Datasheet Details
IRGP4078DPBF, IRGP4078D-EPBF
International Rectifier
839.12 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGP4078DPBF, IRGP4078D-EPBF.
Please refer to the document for exact specifications by model.
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IRGP4078DPBF Distributor
