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IRGP4069PbF Datasheet, International Rectifier

IRGP4069PbF transistor equivalent, insulated gate bipolar transistor.

IRGP4069PbF Avg. rating / M : 1.0 rating-12

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IRGP4069PbF Datasheet

Features and benefits


* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 5 μS short circuit SOA
* Square RBSOA
* 100% .

Application


* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.

Image gallery

IRGP4069PbF Page 1 IRGP4069PbF Page 2 IRGP4069PbF Page 3

TAGS

IRGP4069PbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRGP4069-EPbF
IRGP4069D-EPbF
IRGP4069DPbF
International Rectifier

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