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IRGP30B60KD-EP Datasheet International Rectifier

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International Rectifier · IRGP30B60KD-EP File Size : 296.84KB · 2 hits

Features and Benefits









• Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=1.

IRGP30B60KD-EP IRGP30B60KD-EP IRGP30B60KD-EP
TAGS
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRGP30B60KD-E
IRGP30B60KD-EP
IRGP30B120KD-E

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