IRGB5B120KDPBF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA. www.DataSheet4U.com
* Ultrasoft Dio.
f.com
9
IRGB5B120KDPbF
L
L
0
DUT 1K
VCC
80 V Rg
DUT
1000V
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Fig.C.T.1 - Gate Charge Circuit .
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