logo

IRGB4715DPbF Datasheet, International Rectifier

IRGB4715DPbF transistor equivalent, insulated gate bipolar transistor.

IRGB4715DPbF Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 642.58KB)

IRGB4715DPbF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs complia.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses 5.5.

Image gallery

IRGB4715DPbF Page 1 IRGB4715DPbF Page 2 IRGB4715DPbF Page 3

TAGS

IRGB4715DPbF
Insulated
Gate
Bipolar
Transistor
International Rectifier

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts