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IRGB4056DPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGB4056DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB4056DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	353.41 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGB4056DPBF Download (PDF)

Overview

PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 µS short circuit SOA.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode.
Tight parameter distribution.
Lead Free Package C G E n-channel IRGB4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C.

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