• Part: IRGB4056DPBF
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: International Rectifier
  • Size: 353.41 KB
Download IRGB4056DPBF Datasheet PDF
IRGB4056DPBF page 2
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IRGB4056DPBF page 3
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IRGB4056DPBF Key Features

  • Low VCE (ON) Trench IGBT Technology
  • Low switching losses
  • Maximum Junction temperature 175 °C
  • 5 µS short circuit SOA
  • Square RBSOA
  • 100% of the parts tested for 4X rated current (ILM)
  • Positive VCE (ON) Temperature co-efficient
  • Ultra fast soft Recovery Co-Pak Diode
  • Tight parameter distribution
  • Lead Free Package