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IRGB4610DPBF Datasheet, International Rectifier

IRGB4610DPBF transistor equivalent, insulated gate bipolar transistor.

IRGB4610DPBF Avg. rating / M : 1.0 rating-13

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IRGB4610DPBF Datasheet

Features and benefits

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs s.

Application


* Appliance Drives
* Inverters
* UPS Features Low VCE(ON) and switching losses Square RBSOA and maximum junc.

Image gallery

IRGB4610DPBF Page 1 IRGB4610DPBF Page 2 IRGB4610DPBF Page 3

TAGS

IRGB4610DPBF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRGB4615DPBF
IRGB4607DPbF
IRGB4620DPBF
International Rectifier

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