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IRGB4615DPBF - Power MOSFET

Download the IRGB4615DPBF datasheet PDF. This datasheet also covers the IRGS4615DPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGS4615DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRGB4620DPbF IGBT Infineon
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IRGB4640DPbF Insulated Gate Bipolar Transistor Infineon
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGB4610DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGB4607DPbF Insulated Gate Bipolar Transistor
IRGB4620DPBF Power MOSFET
IRGB4630DPbF Insulated Gate Bipolar Transistor
IRGB4045DPbF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.