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IRG7PSH73K10PbF Datasheet, International Rectifier

IRG7PSH73K10PbF transistor equivalent, insulated gate bipolar transistor.

IRG7PSH73K10PbF Avg. rating / M : 1.0 rating-11

datasheet Download (384.62KB)

IRG7PSH73K10PbF Datasheet

Features and benefits


* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction Temperature 175 °C
* 10 μS short Circuit SOA
* Square RBSOA
* 100%.

Application


* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Trans.

Image gallery

IRG7PSH73K10PbF Page 1 IRG7PSH73K10PbF Page 2 IRG7PSH73K10PbF Page 3

TAGS

IRG7PSH73K10PbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRG7PSH50UDPbF
IRG7PSH54K10DPbF
IRG7PG35U-EPbF
International Rectifier

Manufacturer


International Rectifier
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