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IRG7PG35U-EPbF Datasheet, International Rectifier

IRG7PG35U-EPbF transistor equivalent, insulated gate bipolar transistor.

IRG7PG35U-EPbF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 411.36KB)

IRG7PG35U-EPbF Datasheet

Features and benefits


* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature c.

Application


* Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses
* Rugged tran.

Image gallery

IRG7PG35U-EPbF Page 1 IRG7PG35U-EPbF Page 2 IRG7PG35U-EPbF Page 3

TAGS

IRG7PG35U-EPbF
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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