l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP applications c VCE(ON) typ. @ IC = 40A IR.

c VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C 1.70 225 V A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150.

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.

IRG7IC28UPBF

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IRG7PH30K10DPBF

IRG7PH30K10PBF

IRG7PH35U-EP

IRG7PH35UD-EP

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