IRFZ46ZSPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l.
Absolute Maximum Ratings
IRFZ46ZLPbF
HEXFET® Power MOSFET D VDSS = 55V
G RDS(on) = 13.6mΩ S ID = 51A
TO-220AB IRFZ46Z.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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