IRFZ46ZL mosfet equivalent, automotive mosfet.
O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 289.72KB)