Datasheet4U Logo Datasheet4U.com

IRFU2405PBF - HEXFET Power MOSFET

Download the IRFU2405PBF datasheet PDF. This datasheet also covers the IRFR2405PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • PLE: T HIS IS AN IRF R120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INT ERNAT IONAL RECT IFIER LOGO IRF U120 12 34 DAT E CODE P = DES IGNAT ES LEAD-F REE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR2405PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU2405 N-Channel MOSFET INCHANGE
IRFU2407 N-Channel MOSFET INCHANGE
IRFU24N15D N-Channel MOSFET INCHANGE
IRFU210 Power MOSFET Vishay Siliconix
IRFU210A Power MOSFET Samsung

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU2405 Power MOSFET
IRFU2407 Power MOSFET
IRFU2407PbF Power MOSFET
IRFU24N15D SMPS MOSFET
IRFU24N15DPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 55V G S RDS(on) = 0.016Ω ID = 56A† Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Published: |