IRFU2307ZPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
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IRFR2307ZPbF IRFU2307ZPbF
HEXFET® Power MOSFET
D
VDSS = 75V
G RDS(on) = 16mΩ S ID = 42A
D-Pak
I-Pak
IRFR2307ZPbF IR.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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