lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax Description Specifically des.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.

IRFU2307ZPbF

IRFU230A

IRFU230B

IRFU234A

IRFU234B

IRFU210

IRFU210A

IRFU210B

IRFU210PBF

IRFU214

IRFU214A

IRFU214B

IRFU214BA3HD

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