l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Fr.

G Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC =.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

IRFR540Z

IRFR5410

IRFR5410PBF

IRFR5305

IRFR5305PBF

IRFR5505

IRFR5505PBF

IRFR010

IRFR012

IRFR014

IRFR014A

IRFR014PBF

IRFR020

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