IRFR5410 - HEXFET Power MOSFET

International Rectifier (now Infineon)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFR5410 hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFR5410
Manufacturer	International Rectifier (now Infineon)
File Size	239.44 KB
Description	HEXFET Power MOSFET
Datasheet	IRFR5410 Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRFR5410PBF	HEXFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1533A l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5410) Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D IRFR/U5410 VDSS = -100V RDS(on) = 0.205W G S ID = -13A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.