IRFR4105PbF mosfet equivalent, power mosfet.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Char.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
l
HEXFET® Power MOSFET
D
VDSS = 55V
G S
RDS(on) = 0.045Ω ID = 27A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined .
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