IRFR4105 - Power MOSFET

International Rectifier

IRFR4105 Datasheet Preview — Preview of IRFR4105 PDF

Datasheet Details

Part number	IRFR4105
Manufacturer	International Rectifier ↗
File Size	350.58 KB
Description	Power MOSFET
Datasheet	IRFR4105_InternationalRectifier.pdf

IRFR4105 Product details

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

tance Current Transformer -.
+ RG.
dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test + VDD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Rippl.

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Published: Jul 24, 2006 |