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IRFR4105 - Power MOSFET

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General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Overview

www.DataSheet4U.com PD - 91302C IRFR/U4105 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.

Key Features

  • tance Current Transformer ‚ -.
  • +  RG.
  • dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test + VDD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Rippl.

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