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Applications l High frequency DC-DC converters
PD - 95258A
IRFL4315PbF
VDSS 150V
HEXFET® Power MOSFET
RDS(on) max
ID
185mW@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current
l Lead-Free
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
SOT-223
Max. 2.6 2.1 21 2.8 0.02 ± 30 6.
IRFL4315PbF Datasheet
