IRFL024ZTR
Description
This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
2.2Features
Advanced Process Technology Ultra Low On-Resistance
2.1Features
VDS (V)=55V ID=5.1A(VGS=10V) RDS(ON)≤57.5mΩ(VGS=10V)
150°C Operating Temperature Fast Switching
3.Pinning information
4D
Pin
Symbol Description
SOT-223 top view
GATE
2,4
DRAIN
SOURCE
G DS
4.Absolute Maximum Ratings
Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) ì Continuous Drain Current, VGS @ 10V ì Pulsed Drain Current æ Power Dissipation ì Power Dissipation í Linear Derating Factor ì Gate-to-Source Voltage Single Pulse Avalanche Energy ç Single Pulse Avalanche Energy Tested Value ë
TA=25°C TA=70°C
TA=25°C TA=25°C
Symbol ID IDM PD
VGS EAS (Thermally limited)
EAS (Tested )
Max....
