IRFL4310PbF mosfet equivalent, power mosfet.
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D VDSS = 100V RDS(on) = 0.20Ω ID = 1.6A
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The SOT-223 package is designed for surface-mount using vapor phase, inf.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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