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IRFHM7194TRPBF - Power MOSFET

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at

Features

  • Low RDSon (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 16.4 13 2.0 34 V m nC  A   Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier FastIRFET™ IRFHM7194TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<16.4m) Low Charge (typical 13nC) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<0.
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